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Mobility enhancement in strained Si NMOSFETs with HfO₂ gate dielectricsRIM, K; GUSEV, E. P; LEE, B. H et al.Symposium on VLSI technology. 2002, pp 12-13, isbn 0-7803-7312-X, 2 p.Conference Paper

Characterization and Modeling of Transistor Variability in Advanced CMOS Technologies : CHARACTERIZATION OF NANO CMOS VARIABIALITY BY SIMULATION AND MEASUREMENTSMAGGIONI MEZZOMO, Cecilia; BAJOLET, Aurélie; CATHIGNOL, Augustin et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 8, pp 2235-2248, issn 0018-9383, 14 p.Article

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Experimental study and simulations on two different avalanche modes in trench power MOSFETsPAWEL, I; SIEMIENIEC, R; RÖSCH, M et al.IET circuits, devices & systems (Print). 2007, Vol 1, Num 5, pp 341-346, issn 1751-858X, 6 p.Conference Paper

Frequency characteristics of sub-100 nm double-gate MOSFET for suppressing short channel effectsKO, Suk-Woong; KIM, Young-Dong; JUNG, Hak-Kee et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S134-S136, issn 0268-1242Conference Paper

Modulation of drain current by redox-active molecules incorporated in Si MOSFETsGOWDA, Srivardhan; MATHUR, Guru; QILIANG LI et al.International Electron Devices Meeting. 2004, pp 707-710, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Three-dimensional multi-bridge-channel MOSFET (MBCFET) fabricated on bulk Si-substrateLEE, Sung-Young; YOON, Eun-Jung; KIM, Sung-Min et al.DRC : Device research conference. 2004, pp 119-120, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

TaN metal gate MOSFETs with aggressively scaled HfO₂ gate dielectricsLANDER, R. J. P; SCHRAM, T; KUBICEK, S et al.Proceedings - Electrochemical Society. 2003, pp 367-373, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

A three-transistor threshold voltage model for halo processesRIOS, Rafael; SHIH, Wei-Kai; SHAH, Atul et al.IEDm : international electron devices meeting. 2002, pp 113-116, isbn 0-7803-7462-2, 4 p.Conference Paper

Extraction of bias-dependent parasitic source/drain resistance in MOSFETs with an advanced mobility modelCHANG, Yang-Hua; YANG, Kun-Ying.Microelectronics and reliability. 2010, Vol 50, Num 2, pp 174-178, issn 0026-2714, 5 p.Article

A new constant-current technique for MOSFET parameter extractionLU, Chao-Yang; COOPER, James A.Solid-state electronics. 2005, Vol 49, Num 3, pp 351-356, issn 0038-1101, 6 p.Article

A novel scaling-parameter-dependent subthreshold swing model for double-gate (DG) SOI MOSFETs: including effective conducting path effect (ECPE)CHIANG, T. K.Semiconductor science and technology. 2004, Vol 19, Num 12, pp 1386-1390, issn 0268-1242, 5 p.Article

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Schottky-barrier-height engineering for strained-Si MOSFETsIKEDA, Keiji; YAMASHITA, Yoshimi; ENDOH, Akira et al.DRC : Device research conference. 2004, pp 111-112, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Impact of high-κ dielectrics on undoped double-gate MOSFET scalingQIANG CHEN; LIHUI WANG; MEINDL, James D et al.IEEE International SOI conference. 2002, pp 115-116, isbn 0-7803-7439-8, 2 p.Conference Paper

Simulation study of implant dose sensitivity of a 0.1 μm NMOSFETSRINIVASAIAH, H. C; BHAT, Navakanta.SPIE proceedings series. 2002, pp 699-702, isbn 0-8194-4500-2, 2VolConference Paper

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On the V_th controllability for 4-terminal double-gate MOSFETsMASAHARA, M; LIU, Y.-X; KANEMARU, S et al.IEEE international SOI conference. 2004, pp 100-101, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

Computation of effective mobility in buried channel heterostructure MOSFETKAR, G. S; MALKAP, S; RAY, S. K et al.SPIE proceedings series. 2002, pp 874-877, isbn 0-8194-4500-2, 2VolConference Paper

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Validation of MOSFET model source-drain symmetryMCANDREW, Colin C.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 9, pp 2202-2206, issn 0018-9383, 5 p.Article

Fin width scaling criteria of body-tied FinFET in sub-50 nm regimeHYE JIN CHO; JEONG DONG CHOE; MING LI et al.DRC : Device research conference. 2004, pp 209-210, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper